Integrated circuits having in-situ constraints

ABSTRACT

In accordance with the present method and system for improving integrated circuit layout, a local process modification is calculated from simulated process response variables at a set of control points. Said modification values are incorporated into the layout constraints imposed by design rules and design intent to account for manufacturing friendliness. Solving the updated constraint equation with user specified objective function produces a new layout with increased manufacturability. The new layout may further contain data tags that enable optimal process correction to be performed on selected locations, leading to reduction in data size and mask complexity. Enhanced physical design tools are provided to read and process anisotropic design rules.

CROSS REFERENCE RELATED APPLICATIONS

This application claims priority to, and is a division of each of:

U.S. patent application Ser. No. 15/903,632, filed Feb. 23, 2018, now U.S. Pat. No. 10,846,454, issued Nov. 24, 2020, and U.S. patent application Ser. No. 15/903,603, filed Feb. 23, 2018, now U.S. Pat. No. 10,860,773, issued Dec. 8, 2020, which are each a Continuation of U.S. patent application Ser. No. 15/715,097, filed Sep. 25, 2017, now abandoned, which is a continuation of U.S. patent application Ser. No. 15/251,961, filed Aug. 30, 2016, now U.S. Pat. No. 9,798,853, issued Oct. 24, 2017, which is a continuation of U.S. patent application Ser. No. 13/886,577, filed May 3, 2013, now U.S. Pat. No. 9,697,317, issued Jul. 4, 2017, which is a continuation of U.S. patent application Ser. No. 13/547,444, filed on Jul. 12, 2012, now U.S. Pat. No. 8,464,187, issued Jun. 11, 2013, which is a continuation of U.S. patent application Ser. No. 12/181,483 filed on Jul. 29 2008, now U.S. Pat. No. 8,266,557, issued Sep. 11, 2012, which is a continuation-in-part of U.S. patent application Ser. No. 10/907,814, filed on Apr. 15, 2005, now U.S. Pat. No. 7,448,012, issued Nov. 4, 2008, which claims priority to U.S. Provisional Patent Application Ser. No. 60/603,758 filed on Aug. 23, 2004, and U.S. Provisional Patent Application Ser. No. 60/564,082, filed on Apr. 21, 2004, each of which is expressly incorporated herein in their entirety.

FIELD OF THE INVENTION

The present invention relates generally to integrated-circuit devices and more particularly to integrated-circuit devices having superior manufacturing yield.

PRIOR ART

In modern processing technology, the manufacturing yield of an integrated circuit depends heavily on its layout construction. For a given manufacturing process, a corresponding set of design rules are applied during chip layout to avoid geometry patterns that can cause chip failure. These design rules guarantee the yield by limiting layout geometry parameters such as minimum spacing, minimal line width, etc.

Existing layout construction systems apply design rules over a wide chip area, and to entire classes of circuits. For this reason, the design rule must cover the worst case in all products. Failure to capture the absolute worst case in all chips would lead to systematic yield failure.

In modern processing technologies such as advanced photolithography, many layout features may interact during chip processing. When the interaction distance increases to greater than a few minimal pitches, the number of interacting features increases sharply. For this reason, the feature dependent interactions are difficult to capture with precise design rules. In practice, one makes global design rule sufficiently relaxed in order to guarantee the yield.

The drawback of this approach is at least two fold: firstly, it clearly wastes chip area, and secondly, finding the worst case feature combination in all chips is a non-trivial task that consumes large engineering resources.

Some emerging processing technologies also prefer one spatial direction to the other. Existing layout generation systems, however, use identical minimal spacing and minimal width rules for both directions. This leads to waste in chip area and under-utilization of processing capability, since the design rules must cover the worst of the two directions.

SUMMARY OF INVENTION

The present invention relates to layout with geometric objects, and more particularly to a system and method for forming layout constraints to account for local and orientation processing dependencies.

The present invention provides a local process modification value to the basic design rule constraint. Local process modification represents an additional safeguard distance beyond the design rule constraint distance. The local process modification value can be calculated from simulated process responses in the region of interest, with a predetermined, often empirical, equation, or from look-up data tables. The original design rule distance plus local process modification effectively creates a new constraint for every unique local situation. With this additional local safeguard, we can reduce the guard band in design rule formulation and improve chip yield by eliminating processing hotspots arising from low probability local feature combinations.

The present invention provides a method that enforces the new local constraints such that simulated local process modification and the original design rule constraint work together to guarantee the chip yield.

For processing technologies with a preferred direction, the present invention constructs two sets of design rule constraint distances for the two orthogonal spatial directions. It constructs layout design systems that can read, store said constraint distances in different memory locations, and apply them according to the orientation of the layout features. By doing so, the layout can fully take advantage of the directional dependence in processing technology.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention is generally shown by way of example in the accompanying drawings in which:

FIG. 1 is a flow and block diagram showing a method and system in accordance with the present invention;

FIG. 2 is a flow and block diagram for enforcing local constraints;

FIG. 3 is a schematic diagram illustrating the calculation of local process modification values;

FIG. 4 illustrates the layout artwork terminology;

FIG. 5 is a block diagram for generating anisotropic layout artwork;

FIG. 6 is a flow diagram for anisotropic layout generation;

FIG. 7A illustrates orientation dependent routing;

FIG. 7B illustrates orientation dependent jog insertion;

FIG. 8 is a block diagram showing a system for implementing the present invention.

DEFINITION LIST 2

Term Definition Width Distance of interior-facing edge for a single layer Space Distance of exterior-facing edge for one or two layers Overlap Distance of interior-facing edge for two layers Enclosure Distance of inside edge to outside edge when the polygon of the inside edge is fully inside the polygon of the outside edge Extension Distance of inside edge to outside edge

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Some preferred embodiments of the present invention will be described in detail with reference to the related drawings of FIGS. 1-8. Additional embodiments, features and/or advantages of the invention will become apparent from the ensuing description or may be learned by the practice of the invention.

The methods and apparatus described here are with respect to integrated circuit manufacturing; however, the techniques described here can be applied to manufacturing or design of any device that require pattern transfer from a polygon database drawing to physical materials using lithographic and/or etch methods. Examples of these include integrated optical devices, microelectromechanical systems (MEMS), gene chips, micromachines, disk drive heads, etc.

The following description includes the best mode presently contemplated for carrying out the invention. This description is not to be taken in a limiting sense, but is made merely for describing the general principles of the invention.

The present invention is directed to methods for improving the manufacturing yield of an IC by optimizing its layout pattern.

FIG. 1 shows a block and flow diagram for the present invention. In block 000, the original design layout and process description are read into the system. Said design layout comprises a plurality of interrelated layout objects, one or more layers, and can be flat or organized in a hierarchical data structure comprising a plurality of masters, cells, and/or array instances. The relative distances between said layout objects are constrained by design rule and design intent.

The process description comprises design rules, simulation models, manufacturing equipment settings, material options, empirical fitting parameter, and look-up data tables that describe the manufacturing behavior.

Block 002 builds initial linear constraints from the input layout, design rules, and circuit requirements. In a preferred embodiment, well-known procedures, such as the shadow propagation method; is applied to accomplish this task. A description of the procedure can be found in Jurgen Doenhardt and Thomas Lengauer, “Algorithm Aspects of One-Dimensional Layout Compaction”, IEEE Trans. Computer-Aided design. Vol. CAD-6 no. 5 September 1987. pp. 863.

Said initial linear constraint equation takes the form AX=d_old, where A is a matrix of coefficients; X is a vector of positional variables comprising location of the polygon edges; and d_old is a column vector of constraint distances. Constraint distances comprise design rule constraint distances and circuit specific design intent. An example of a constraint distance is the minimal line width.

A constraint equation is expressed in the form xi−xj>dij_old, where xi and xj are locations of two interacting polygon edges in the layout, and dij_old is the constraint distance between these two edges. The elements of matrix A in this equation are 1 and −1. The vector d_old is a collection of dij_old. The value of dij_old is given by the design rule or by circuit requirements. For example, dij_old can be the minimal width of a wire as required by process capabilities. In another case, it dij_old is the width of a particular wire that is designed to carry a large amount of current where it would be wider than the minimal wire width required by the process alone.

Block 004 generates local process modification values. A local process modification to the design rule constraint distance transforms the global design rule constraints into location specific constraints. Individual evaluation and enforcement of the required safety margin at each critical location enhances the manufacturing yield of a chip. In a preferred embodiment, we calculate local process modification at constrained locations from manufacturing response variables. Details of a preferred embodiment will be discussed in FIG. 3.

Block 006 combines local process modification value delta_dij, with the original constraint distances generated in block 002. A linear constraint equation now takes the form xi−xj>dij_new, where dij_new=dij_old+delta_dij is defined as the local constraint distance. A collection of dij_new values forms the local constraint distance vector, d_new. The system of equations for local constraint takes the form A*X=d_new.

Local constraint distance is a general addition to the constraint distance specified by design rules. Therefore, it can be applied to any physical design system where design rule constrained layout construction and optimization is performed.

Block 008 enforces the local constraint distance to the original layout. Preferred embodiments will be illustrated in FIG. 2.

Block 010 updates the coordinate variables in the layout according to the solution of the enforcement procedure 008.

The present invention modifies a design rule constraint distance, which is global in nature, with a local process modifier to account for specific local conditions. This mechanism adds extra safeguard to the design rule methodology. If a design rule clean layout contains locations with poor process latitude, the local process modifier delta_dij will be larger than that in other places. By enforcing the new local constraint, dij_new=dij_old+delta_dij, the layout is modified to have better process latitude.

For example if two minimally spaced lines tend to bridge due to a particular surrounding condition, the local process modifier will increase the minimal spacing between them, causing the layout edges to moved further apart during enforcement.

FIG. 2 shows a preferred embodiment for local constraint enforcement. At the start of the procedure, we have a system of equations for local constraint, AX=d_new. The edge locations in the original layout are likely to violate some of the local constraint distances.

Block 100 constructs an objective function Ct*X, where Ct is a row vector of coefficients for achieving various optimization objectives, and X is the position variable in the layout. In a preferred embodiment, the objective function together with the linear constraint system removes the new violations introduced by local constraint with minimal perturbation. For example, we can use the procedure described by Heng et. al. entitled “A VLSI Artwork Legalization Technique Based on a New Criteria of Minimum Layout Perturbation”, ACM/IEEE Intl. Symp. on Physical Design, pp. 116-121, 1997.

By receiving appropriate Ct values, we construct objective functions for wire length minimization, legalization, compaction, and other measurable metrics of layout.

Block 102 solves the linear system problem of minimizing Ct*X, subject to A*X=d_new. This is a standard form for a linear programming problem. We use commercial software packages such as CPLEX from ILOG can be used for this purpose.

Block 104 updates the layout with the solution X of the linear system.

In q one-dimensional method, the flow is performed one direction at a time, first x(y) then y(x).

In a two-dimension method, the flow is performed for horizontal and vertical position variables simultaneously.

In another preferred embodiment, the violations to local constraints are removed one at a time using heuristic procedures. For example, the single error removal procedure described by Zhan Chen, in “Layout and Logic Techniques for Yield and Reliability Enhancement”, Ph.D. Thesis, University of Massachusetts Amherst, 1998, can be applied to fix isolated violations. It is particularly useful when processing hotspots are few.

By enforcing new local constraints, we improve the local process latitude. It is a function similar to optimal process correction (OPC). By enforcing local constraints, we can eliminate the need to perform OPC in large portion of layout. In a preferred embodiment, we tag locations where local constraint enforcement fails or the circuit tolerance is especially tight so that a specially designed OPC system can pick up these location tags and perform localized OPC.

Our experiments show that only small percentages of locations need OPC after local constraint enforcement. Therefore, the localized OPC procedure will greatly reduce the mask complexity compared to the standard, blanket OPC procedure performed today.

According to the present invention, we calculate the local process modification value at a set of control points that best captures the interaction between the edges. In a preferred embodiment, a simulation based hotspot detection procedure is first applied to the layout. After that, control points are placed on the offending polygon edges. Hotspot detection comprises simulating the image of the layout and measuring the difference between said image and the design intent. In a preferred embodiment, the difference is represented by the edge placement error (EPE). A processing hotspot is a location where EPE is larger than a predetermined threshold. As an example, the control points can be the same points on the layout where EPE is evaluated.

In another preferred embodiment, we select the control points by inspecting the interaction among the edges. FIG. 3 shows two layout rectangles 300 and 302, which can be on the same layer or on different layers in the layout. The constraint relation xi-xj>dij_old applies to these two edges.

The interaction region between the right edge of 300 at xi (301) and the left edge of 302 at xj (303) is defined by the shadow of 301 on 303, as marked by the band between the two dashed lines, 304. We find the shadow region by placing a hypothetical flashlight to the left of 301 and measure its shadow on 303, which is similar to the procedure used in constraint generation in block 004 of FIG. 1.

After finding the interaction region, we implement a predetermined sampling plan for laying down the control points. In FIG. 3, we place a pair of control points 306 and 308, one on each edge, at the same height, in the middle of the shadow band. We can also use other spatial sampling plans involving a plurality of pairs of points.

After deciding the sampling points (e.g. 306 and 308 in FIG. 3), we simulate various processing response variables at these points. In the photolithography step of IC fabrication, said response variables represent local printability and comprise edge placement error, light intensity during photolithography exposure and its derivatives, contrast, and mask error enhancement factor. A predetermined empirical function is used to calculate the local process modification value from said processing response variables.

For the example in FIG. 3, we select a linear function of edge placement error at point 306 and 308 to calculate local process modification. Edge placement error, (314/316 for the left/right edge) is defined as the perpendicular distance from intended edge location (xi/xj for the left/right edge) to the simulated edge location as predicted by process simulation, (310/312 for the left/right edge).

Once the edge placement errors are calculated for the two interacting edges, the local process modification value is expressed as w1*EPE_i+w2*EPE_j, where EPE_i 314 and EPE_j 316 are the edge placement errors at 306 and 308 respectively, and w1 and w2 are user specified constants. Local constraint for edges 301 and 303 can now be expressed as dij_new=dij_old+w1*EPE_i+w2*EPE_j.

Variations in functional forms for local process modification can be constructed and additional process variables can be used in order to cover the specific needs of a particular application.

In another preferred embodiment, the local process modification value is obtained from a predetermined look-up data table. The key to the look-up data table is a set of geometry combinations that appear frequently in the layout, such as the two rectangle case show in FIG. 3. The application uses pattern recognition capability to identify the pattern key and search the look-up table in order to obtain appropriate local process modification value. This embodiment is advantageous when good simulation accuracy cannot be obtained, and the interaction is limited to a short range.

The local process modifications discussed so far are microscopic correction to the design rule constraints. In modern processing technology, there are also systematic corrections to design rules on a larger scale. For example, in immersion lithography, one can utilize the polarization property of the imaging light to achieve higher image resolution in a preferred direction. Another example is the crystal orientation dependence in device performance. According to the present invention, we formulated two sets of design rule distances, one set for horizontal dimensions and another set for vertical dimensions in order to achieve best chip performance. We construct physical layout tools to utilize these two separate constraint distances. The optimal layout for these technologies are anisotropic in that the horizontal and vertical directions obey different constraints for minimal space, line width, overlap, enclosure, and extension rules. The exact definition of these geometry terms are listed in Definition List 1 and illustrated in FIG. 4.

Design rules that have different constraint distances for horizontal and vertical directions are defined as anisotropic design rules. The layout that satisfy anisotropic design rules are defined as anisotropic layout.

Design rules that have the same constraint distances for horizontal and vertical directions are defined as isotropic design rules, or simply design rules. The layouts that satisfy isotropic design rules are defined as isotropics layout.

The present invention comprises layout systems that are capable of generating and optimizing layout artwork for a direction dependent processing technology.

In accordance with the current invention, we design a set of simple test patterns with parameterized critical dimensions. The parameter values are selected such that they vary from the value when said pattern can be successfully fabricated to a value at which the fabrication clearly fails. We extract the design rules by finding and recording the parameter value at which the test pattern can be successfully fabricated under all allowable processing conditions, i.e., the process window.

In a preferred embodiment, two separate sets of test patterns are fabricated. One set comprises geometries oriented along the vertical direction. The other set comprises geometries oriented along the horizontal direction. For example, one set has line and space gratings running along the vertical direction; the other set has the same running along horizontal direction. The variable parameters in this example are line width and space width. Extracted design rules from this set of test patterns represent distance constraints for line width and space width in horizontal and vertical directions.

For a direction dependent processing technology, the present invention extracts two distinctive sets of constraint parameters to form an anisotropic design rule set.

FIG. 5 shows a flow diagram for generating optimal layout for a direction dependent processing technology. Starting with design database that contains the circuit netlist and performance target (500), we apply a set of software tools (501) to create a polygonal layout for fabrication. These tools comprise layout editors, placement and routing tools, layout compaction tools, and standard cell generators etc. The tool collection (501) uses anisotropic design rules (502) to restrict the relative positioning of polygon edges based on the orientation of the edge.

In a preferred embodiment, FIG. 6 shows a flow diagram for generating layout for an anisotropic image system. The steps performed in FIG. 6 uses a subset of the tool collection 501.

During floor planning (602) and placement (603), a preferred orientation of the image system is used to optimize the shape, position and orientation of the circuit building blocks. More circuit element can be accommodated in the direction with higher resolution, while the direction with lower resolution has lower line-to-line parasitic capacitance and lower resistance. In routing modules 604 and 605, wiring direction dependent design rules from the memory are used for identifying obstacles, setting wire width and spacing, and estimating resistance and capacitance.

FIG. 7A shows a basic operation during wire routing. A wire is constructed by the routing algorithm to connect two points, A and B. In a preferred embodiment, starting from point A, while the wire is running horizontally (700), the application fetches the minimal width of the horizontal wire from the memory and applies it to limit the current wire segment. After turning 90 degrees (701), the wire now is running along the vertical direction, the application fetches the minimal width of the vertical wire from a different memory location and applies it to limit the minimal line width.

The wire is also kept at safe distances away from obstacles 703 and 704 using directional dependent minimal spacing rules. In a preferred embodiment, the layout generation system compares the separation 705 between vertical line segments 701 and 704, with the minimal spacing rule between vertical lines and reports error when this horizontal constraint is violated. Said system compares the separation 706 between horizontal line segments 702 and 703, with the minimal spacing rule between horizontal lines and reports error when this vertical constraint is violated. In prior art physical design systems, the minimal values for 705 and 706 are the same and equal to the minimal space rule, which is kept at the same memory location in the design system.

FIG. 7B illustrates the procedure for wire jog insertion. In layout systems, interconnect needs to be converted from paths that have no width information to actual layout wires. The preferred width is specified in the technology file. In a preferred embodiment, two numbers representing preferred wire width in vertical and in horizontal direction are read from different input fields. During path to wire conversion, the main wire portion 708 uses width and spacing width for the vertical wires, while jog portion 707 uses width and spacing rules for horizontal wires.

In another preferred embodiment, design rule verification and compaction programs in FIG. 6 are constructed to accept and process anisotropic design rules. For example, the corner to corner constraint on a layout layer may now be expressed as sqrt(d_h*d_h+d_v*d_v), where d_h and d_v ate horizontal and vertical constraint distances respectively. In contrast, in an isotropic layout system, said corner constraint is sqrt(2)*d0, where d0 is the isotropic constraint distance.

Referring to FIG. 8, a block/flow diagram is shown for a system 800 of the present invention. System 800 includes a processor 802 that accesses memory device 804. Memory device 804 stores an application software package 806 for implementing the present invention. A user interfaces with the processor 802 through an input device 808 which may include a keyboard, a mouse, a touch screen monitor, a voice recognition system or other known input devices. A display 810 is also included to display results, prompts, user inputs, graphics, etc.

While the present invention has been described in detail with regards to the preferred embodiments, it should be appreciated that various modifications and variations may be made in the present invention without departing from the scope or spirit of the invention. In this regard, it is important to note that practicing the invention is not limited to the applications described hereinabove. Many other applications and/or alterations may be utilized if such other applications and/or alterations do not depart from the intended purpose of the present invention.

It should further be appreciated by a person skilled in the art that features illustrated or described as part of one embodiment can be used in another embodiment to provide yet another embodiment such that the features are not limited to the specific embodiments described above. Thus, it is intended that the present invention cover such modifications, embodiments and variations as long as such modifications, embodiments and variations come within the scope of the appended claims and their equivalents. 

What is claimed is:
 1. An integrated circuit manufactured using an integrated circuit fabrication system in a process comprising: detecting at least one area in a design layout according to a plurality of original design rules and an optimization that includes a layout object-specific layout pattern, wherein the original design rules comprise limits on minimum distance between layout objects represented in the layout object-specific layout pattern; modifying the design layout by including a layout object-specific layout pattern modification to the plurality of original design rules which comprise limits on the minimum distance between the layout objects, which increases the minimum distance between the layout objects above at least one respective original design rule on the minimum distance between the layout objects associated with the at least one area, while enforcing the plurality of original design rules which comprise limits on the minimum distance between the layout objects, to generate a modified design layout; and providing the modified design layout as an output.
 2. The integrated circuit of claim 1, wherein the layout object-specific layout pattern modification is determined based on a look-up data table, such that each occurrence of the layout object-specific layout pattern is associated with a respective layout object-specific layout pattern modification to the plurality of original design rules.
 3. The integrated circuit of claim 1, wherein a layout object-specific layout pattern in the at least one area is employed as a pattern key to search a look-up table, such that each occurrence of the layout object-specific layout pattern is associated with a respective layout object-specific layout pattern modification to the plurality of original design rules.
 4. The integrated circuit of claim 3, wherein a pattern of two adjacent layout objects in the at least one area is employed as a geometry combination pattern key to search a look-up table, such that each occurrence of the pattern of two adjacent layout objects is associated with a respective layout object-specific layout pattern modification to the plurality of original design rules.
 5. The integrated circuit of claim 1, wherein the layout objects comprise adjacent spaced lines.
 6. A method of producing a photolithography design, comprising: providing a netlist, a set of global design rules comprising at least global rules limiting relative distances of layout objects of a photolithography design layout and an original design layout of layout objects dependent on the set of global design rules, that has poor process latitude; automatically recognizing patterns of interacting layout objects within the original design layout that cause the poor process latitude; automatically modifying the set of global design rules according to pattern-specific design rules which remedy poor process latitude by the recognized patterns of interacting layout objects within the original design layout, to produce a modified set of design rules; and automatically modifying the original design layout according to the modified set of design rules to produce a modified design layout, wherein the modified design layout meets the netlist and the set of global design rules, and differs from the original design layout.
 7. The method according to claim 6, further comprising outputting the modified design layout.
 8. The method according to claim 7, further comprising manufacturing an integrated circuit based on the output modified design layout.
 9. A method of producing a photolithographic design defining a plurality of layout objects in a photolithographic process, comprising: automatically laying out the plurality of layout objects in an initial photolithography design layout according to general design rules comprising at least one minimum distance rule and a design layout optimization; automatically detecting at least one critical area of the initial photolithography design layout based on an adverse effect of process latitude on the photolithographic process with respect to the at least one critical area; automatically selectively modifying the initial photolithography design layout, to define a modified photolithography design layout, the modified photolithography design layout having a local alteration of the at least one minimum distance rule dependent on a pattern of layout objects in a specific location of the original design layout to at least partially remedy the adverse effect of the process latitude on the photolithographic process with respect to the at least one critical area; and outputting the modified photolithography design layout.
 10. The method according to claim 9, wherein the at least one minimum distance rule applied to the at least one critical area produces the initial photolithography design layout predicted to have a first photolithographic manufacturing yield, and the modified photolithography design layout, predicted to have a second manufacturing yield, wherein the second manufacturing yield is greater than the first manufacturing yield.
 11. The method according to claim 9, further comprising manufacturing at least one of a photolithographic product and a photolithographic mask corresponding to the modified photolithographic design layout.
 12. The method according to claim 9, wherein the design payout optimization, optimizes according to an objective function.
 13. The method according to claim 9, wherein at least a portion of the at least one minimum distance rule comprises anisotropic minimum distance rules.
 14. The method according to claim 9, wherein the initial photolithography design layout comprises a first plurality of routing wires running in a first direction, and a second plurality of routing wires running in a second direction, the second direction being orthogonal to the first direction, the routing wires of the first plurality of routing wires having first width values, the routing wires of the second plurality of routing wires having second width values, the first width values being substantially different from the second width values.
 15. The method according to claim 14, wherein the step of automatically selectively modifying the initial photolithography design layout comprises at least one of (a) locally adjusting at least a width value of at least one of the first plurality of routing wires; and (b) locally adjusting at least a spacing value between a pair of the first plurality of routing wires.
 16. The method according to claim 9, wherein the initial photolithography design layout comprises interrelated layout objects organized in a hierarchical structure including master instances, cell instances, and array instances.
 17. The method according to claim 9, wherein the pattern of layout objects within the initial photolithography design layout comprises interrelated layout objects on one layer of the initial photolithography design layout.
 18. The method according to claim 9, wherein the pattern of layout objects is determined by performing automated pattern recognition of combinations of geometry in the initial photolithography design layout.
 19. The method according to claim 9, wherein: the general design rules comprise a minimum safeguard distance limit; and the step of automatically selectively modifying the initial photolithography design layout comprises generating an additional safeguard distance, and adding the additional safeguard distance to the minimum safeguard distance limit.
 20. The method according to claim 9, further comprising further modifying the modified photolithography design layout selectively dependent on a circuit tolerance of structures defined by the pattern of layout objects in the specific location.
 21. The method according to claim 9, wherein said step of automatically selectively modifying the initial photolithography design layout comprises modifying the general design layout by optimizing according to an optimization objective in a presence of constraints imposed by at least the pattern of layout objects.
 22. The method according to claim 9, wherein said step of generating the modified design layout causes at least one new violation of the original design rules comprising at least one minimum distance rule, further comprising optimizing the modified photolithography design layout according to at least one optimization objective. 